发明名称 METHOD FOR DETECTING PATTERN OFFSET BETWEEN EXPOSURING REGIONS AND DETECTING PATTERN
摘要 PURPOSE: A measuring method of the pattern shift amount between exposure areas, and a measuring mark for the method are provided to rapidly measure the pattern shift amount in real time, and to improve the fault detection rate and the yield. CONSTITUTION: A measuring method of the pattern shift amount between exposure areas comprises the following steps: forming a pair of conductive measuring marks(6,7) with the predetermined position using a patterning process by exposing for 2 times; measuring the electrical property of the conductive measuring marks; and confirming the success or failure of the pattern shift amount between the exposure areas by the electrical property of the conductive measuring marks.
申请公布号 KR20110126062(A) 申请公布日期 2011.11.22
申请号 KR20110045002 申请日期 2011.05.13
申请人 BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 GUO JIAN;ZHOU WEIFENG;MING XING
分类号 G03F9/00;G03F7/20 主分类号 G03F9/00
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