发明名称 |
METHOD FOR DETECTING PATTERN OFFSET BETWEEN EXPOSURING REGIONS AND DETECTING PATTERN |
摘要 |
PURPOSE: A measuring method of the pattern shift amount between exposure areas, and a measuring mark for the method are provided to rapidly measure the pattern shift amount in real time, and to improve the fault detection rate and the yield. CONSTITUTION: A measuring method of the pattern shift amount between exposure areas comprises the following steps: forming a pair of conductive measuring marks(6,7) with the predetermined position using a patterning process by exposing for 2 times; measuring the electrical property of the conductive measuring marks; and confirming the success or failure of the pattern shift amount between the exposure areas by the electrical property of the conductive measuring marks. |
申请公布号 |
KR20110126062(A) |
申请公布日期 |
2011.11.22 |
申请号 |
KR20110045002 |
申请日期 |
2011.05.13 |
申请人 |
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
GUO JIAN;ZHOU WEIFENG;MING XING |
分类号 |
G03F9/00;G03F7/20 |
主分类号 |
G03F9/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|