发明名称 Formation of photoconductive and photovoltaic films
摘要 A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configured to direct sputtered material towards the substrate to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber. The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate. The first PECVD apparatus includes a first PECVD electrode movable from a first position towards the substrate and a second position away from the substrate.
申请公布号 US8061299(B2) 申请公布日期 2011.11.22
申请号 US20050059981 申请日期 2005.02.17
申请人 ENGLE GEORGE M. 发明人 ENGLE GEORGE M.
分类号 C23C16/50;C23C14/00;C23C14/06;C23C14/32;C23C14/34;C23C16/00;C23C16/06;C23C16/22;C23C16/448;C23C16/503;C23C16/505;C23C16/509;C23C16/52;C23F1/00;C25B11/00;H01J37/32;H01J37/34;H01L21/306 主分类号 C23C16/50
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