发明名称 |
Formation of photoconductive and photovoltaic films |
摘要 |
A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configured to direct sputtered material towards the substrate to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber. The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate. The first PECVD apparatus includes a first PECVD electrode movable from a first position towards the substrate and a second position away from the substrate. |
申请公布号 |
US8061299(B2) |
申请公布日期 |
2011.11.22 |
申请号 |
US20050059981 |
申请日期 |
2005.02.17 |
申请人 |
ENGLE GEORGE M. |
发明人 |
ENGLE GEORGE M. |
分类号 |
C23C16/50;C23C14/00;C23C14/06;C23C14/32;C23C14/34;C23C16/00;C23C16/06;C23C16/22;C23C16/448;C23C16/503;C23C16/505;C23C16/509;C23C16/52;C23F1/00;C25B11/00;H01J37/32;H01J37/34;H01L21/306 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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