| 发明名称 |
Method of correcting a mask pattern and method of manufacturing a semiconductor device |
| 摘要 |
The method of manufacturing a semiconductor device has deciding an amount of a correction of a mask pattern for a size of an active region of a semiconductor substrate, correcting the mask pattern on the basis of the decided amount of the correction, and exposing a resist film by using an exposure mask having the corrected mask pattern. |
| 申请公布号 |
US8062810(B2) |
申请公布日期 |
2011.11.22 |
| 申请号 |
US20080052965 |
申请日期 |
2008.03.21 |
| 申请人 |
MASANORI TERAHARA;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
MASANORI TERAHARA |
| 分类号 |
G03F1/36;G03F1/68;G03F1/70;G03F7/00;H01L21/027;H01L21/82;H01L21/822;H01L27/04 |
主分类号 |
G03F1/36 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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