| 摘要 |
A method is described which includes providing a semiconductor substrate and forming a trench in the semiconductor substrate. An epitaxy region is grown in the trench. An amorphous layer is deposited overlying the epitaxy region. The semiconductor substrate is then annealed. The anneal may convert a portion of the amorphous layer to crystalline material, as found in the epitaxy region. A chemical mechanical polish (CMP) is then performed, which may remove a portion of the amorphous layer which has not been converted. In an embodiment, the amorphous layer and epitaxy region are germanium and the semiconductor substrate is silicon. The formed crystalline region may be used to form a channel of a p-type device. |
