用于氮化矽化学气相沉积之方法,申请号TW095120849-传众专利搜索

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发明名称	用于氮化矽化学气相沉积之方法
摘要
申请公布号	TWI352744	申请公布日期	2011.11.21
申请号	TW095120849	申请日期	2006.06.12
申请人	應用材料股份有限公司美國	发明人	伊尔Ｒ　瑟亚纳拉亚南;塞特辛恩Ｍ;谭顿山杰夫;桑契斯爱罗安东尼欧Ｃ;王树林
分类号	C23C16/30;H01L21/205	主分类号	C23C16/30
代理机构		代理人	蔡坤财台北市中山区松江路148号11楼;李世章台北市中山区松江路148号11楼
主权项	一种沉积一含氮化矽层在一基板上之方法，其系包括下列步骤：将位在一制程反应室内之一基板加热至一低于650℃之温度；将一含矽气体流入该制程反应室，其中该含矽气体是1,3,4,5,7,8-六甲基四矽氮烷；将一含氮气体流入该制程反应室；及沉积一含氮化矽层在该基板上。
地址	美国

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