发明名称 |
STAGGERED PROGRAMMING FOR RESISTIVE MEMORIES |
摘要 |
<p>PURPOSE: A staggered programming for resistive memories is provided to program a chuck parts in a staggered mode while programming a part of chunk. CONSTITUTION: In a staggered programming for resistive memories, a programming power source(360) supplies power to a memory device(300) through a program switch(350a,350b). A CPSM(340a) is related to a first chunk(330a). A CPSM(340b) is related to a second chunk(330b). A programmed switch(350a) is related to the first chunk. A programmed switch(350b) is related to the second chunk. The information stored in the memory array(370) is loaded from the GPSM(320) to The CPSM dynamically determines the number of a memory cell to be grouped. The CPSM analyzes a programmed pattern.</p> |
申请公布号 |
KR20110125613(A) |
申请公布日期 |
2011.11.21 |
申请号 |
KR20110044656 |
申请日期 |
2011.05.12 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BARKLEY GERALD;SHETTY SUNIL;MARTINELLI ANDREA |
分类号 |
G11C16/34;G11C13/02;G11C16/10 |
主分类号 |
G11C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|