发明名称 STAGGERED PROGRAMMING FOR RESISTIVE MEMORIES
摘要 <p>PURPOSE: A staggered programming for resistive memories is provided to program a chuck parts in a staggered mode while programming a part of chunk. CONSTITUTION: In a staggered programming for resistive memories, a programming power source(360) supplies power to a memory device(300) through a program switch(350a,350b). A CPSM(340a) is related to a first chunk(330a). A CPSM(340b) is related to a second chunk(330b). A programmed switch(350a) is related to the first chunk. A programmed switch(350b) is related to the second chunk. The information stored in the memory array(370) is loaded from the GPSM(320) to The CPSM dynamically determines the number of a memory cell to be grouped. The CPSM analyzes a programmed pattern.</p>
申请公布号 KR20110125613(A) 申请公布日期 2011.11.21
申请号 KR20110044656 申请日期 2011.05.12
申请人 MICRON TECHNOLOGY, INC. 发明人 BARKLEY GERALD;SHETTY SUNIL;MARTINELLI ANDREA
分类号 G11C16/34;G11C13/02;G11C16/10 主分类号 G11C16/34
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