发明名称 PHOTORESIST STRIPPER COMPOSITION
摘要 PURPOSE: A photo-resist stripping composition is provided to prevent the occurrence of corrosion with respect to metal wirings under a photo-resist film in a stripping process and a deionized water-based rinsing process. CONSTITUTION: A photo-resist stripping composition includes 0.5 to 5 weight% of alkylammonium hydroxide, 60-90 weight% of an aprotic polar solvent, 0.1-3 weight% of aromatic polyalcohol, 0.1-5 weight% of linear polyalcohol, and 5-30 weight% of water. The aromatic alcohol includes one or more carboxylic groups or alkylester groups and includes three or more hydroxylic groups. The aromatic polyalcohol is selected from a group including gallic acid, methyl gallate, ethyl gallate, propyl gallate, butyl gallate, and the mixture of the same. The linear polyalcohol includes three or more hydroxyl groups. The alkylammonium hydroxide is selected from a group including tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and the mixture of the same.
申请公布号 KR20110124955(A) 申请公布日期 2011.11.18
申请号 KR20100044444 申请日期 2010.05.12
申请人 ENF TECHNOLOGY CO., LTD. 发明人 PARK, YOUNG JIN;HAN, DOO SEOK;LEE, SANG DAI;SHIN, HYO SEOP
分类号 G03F7/42 主分类号 G03F7/42
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