| 摘要 |
A solid-state imaging device includes an n-type semiconductor substrate 203, a p-type well 204 provided in the substrate 203, photodiodes 201 arranged in a matrix above the substrate 203, and isolation regions 202 corresponding to the photodiodes 201. The isolation regions 202 each include a p-type first impurity diffusion layer 208. On a part of the p-type well 204 corresponding to the photodiode 201, an n-type first impurity diffusion layer 206 and a p-type impurity diffusion layer 207 that are to be formed as a light receiving part. Only immediately below the photodiode 201 corresponding to red pixels, an n-type second impurity diffusion layer 205 is provided. Immediately below the photodiode 201 corresponding to blue and green pixels, a p-type second impurity diffusion layer 209 is provided. |
