| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents peeling from occurring between an insulating film on the top face of which a strap wiring is formed and a wiring formed on a bottom face of the film, and to provide a method for manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device comprises: a semiconductor substrate SS; wiring layers LL1 and LL2 which are formed on the semiconductor substrate SS and on which a peripheral wiring P1 and a wiring L2 are formed, respectively; a wiring layer LL3 which is formed on the wiring layer LL2 and includes a wiring L3; and a wiring layer LL4 which is formed on the wiring layer LL3 and includes a magnetic storage element MR. A diffusion prevention film NF1 formed on a wiring L1 and a diffusion prevention film NF2 formed on the wiring L2 are formed of an SiCN or SiC film. A diffusion prevention film NF3 formed on the wiring L3 is made of SiN. <P>COPYRIGHT: (C)2012,JPO&INPIT |
