发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To suppress occurence of exfoliation of TEG under dicing and lengthen the durable period of a dicing blade. <P>SOLUTION: A manufacturing method has a characteristic check step (S16), a protection film forming step (S18), an Ni film forming step (S22) and a dicing step (S24). The characteristic check step (S16) is a step of checking the characteristic by using TEG formed in a dicing region. The protection film forming step (S18) is a step of forming SiO<SB POS="POST">2</SB>film on the dicing region after the characteristic check step. The Ni film forming step (S22) is a step of forming an Ni film on IGBT after the protection film forming step. The dicing step (S24) is a step of dicing the dicing region after the Ni film forming step. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011233593(A) 申请公布日期 2011.11.17
申请号 JP20100100243 申请日期 2010.04.23
申请人 TOYOTA MOTOR CORP 发明人 KINOKUNI MASAHIRO
分类号 H01L21/301 主分类号 H01L21/301
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