| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device composed by dividing one memory plane into a plurality of wells. <P>SOLUTION: A memory plane A0 includes data areas 0 to 3 and slots 0 to 3. The data areas 0 to 3 are areas for storing data and includes at least one string constituted by a plurality of memory cells connected in series in a bit line direction. The data areas 0 to 3 are constituted by the other wells, respectively, and connected in series through the slots 0 to 3. A well voltage application unit 15 applies a well voltage that is a data deletion voltage to a well configuring the data area based on an application instruction on a well voltage from a controller 12 and the like. At this time, the slots 0 to 3 disconnects a connection between the data area applied with the well voltage and the adjacent data area. <P>COPYRIGHT: (C)2012,JPO&INPIT |
