发明名称 |
PROCESS FOR PRODUCTION OF SILICON CARBIDE SUBSTRATE, PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE |
摘要 |
<p>Disclosed is a process for producing a silicon carbide substrate, which enables the reduction in cost for the production of a semiconductor device using the silicon carbide substrate. The process comprises the steps of: providing a SiC substrate (20) comprising single crystalline silicon carbide; placing the SiC substrate (20) in a container (70) and placing a base substrate (10) in the container (70) in such a manner that the base substrate (10) faces one main surface (20B) of the SiC substrate (20); and heating the base substrate (10) in the container (70) at a temperature equal to or higher than the sublimation temperature of silicon carbide that constitutes the base substrate (10) to thereby form a base layer (10) comprising silicon carbide in such a manner that the base layer (10) is in contact with one main surface (20B) of the SiC substrate (20). In the step of forming the base layer (10), a silicon generation source (91) comprising a silicon-containing substance, which is different from the SiC substrate (20) or the base substrate (10), is placed in the container (70).</p> |
申请公布号 |
WO2011142158(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
WO2011JP54341 |
申请日期 |
2011.02.25 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;NISHIGUCHI, TARO;HARADA, SHIN;INOUE, HIROKI;SASAKI, MAKOTO |
发明人 |
NISHIGUCHI, TARO;HARADA, SHIN;INOUE, HIROKI;SASAKI, MAKOTO |
分类号 |
H01L21/02;C30B29/36;H01L21/20;H01L21/336;H01L29/12;H01L29/78 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|