| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing an increase in the chip area in which a drive circuit for driving an external device is formed. <P>SOLUTION: When a flash memory 22 performs read operation, a selector 26 selects a reference voltage VREF1 in response to a selection signal SEL inputted from a logic circuit 30. A VLCD booster circuit 28 outputs a driving voltage VLCD obtained by boosting the reference voltage VREF1 to an LCD panel driver 12. The flash memory 22 performs the read operation only if a power supply voltage VDD is supplied. The selector 26 selects a reference voltage VREF2 in response to the selection signal SEL, in order to perform program operation or erasing operation. The VLCD booster circuit 28 outputs a voltage VPP obtained by boosting the reference voltage VREF2 to the flash memory 22. The flash memory 22 performs the program operation or the erasing operation by receiving supply of the voltage VPP. <P>COPYRIGHT: (C)2012,JPO&INPIT |
