发明名称 SUBSTRATE PROCESSING METHOD USING PARALLEL PLATE TYPE PLASMA CVD DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of performing natural oxide film removal processing on a solar cell substrate with high throughput in a step of manufacturing a solar cell. <P>SOLUTION: A method of forming an antireflection film on a surface of the solar cell substrate using the parallel plate type plasma CVD device comprises a removal step of generating plasma including nitrogen ions between a high frequency electrode and a substrate electrode by supplying first processing gas from a processing gas supply device and also applying high frequency electric power of first frequency from a high frequency power source to the high frequency electrode, and removing an oxide film on the solar cell substrate with the nitrogen ions; and a film formation step of generating plasma for forming the antireflection film on the surface of the solar cell substrate between the high frequency electrode and substrate electrode by supplying second processing gas from the processing gas supply device and also applying high frequency electric power of second frequency (>first frequency) from the high frequency power source to the high frequency electrode, and forming the antireflection film on the surface of the solar cell substrate with the plasma. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011233627(A) 申请公布日期 2011.11.17
申请号 JP20100101055 申请日期 2010.04.26
申请人 SHIMADZU CORP 发明人 NAKATANI ATSUO;OGISHI ATSUFUMI;KIJI NOZOMI;TAGUCHI TATSUHIRO
分类号 H01L31/04;C23C16/02;H01L21/31;H01L21/318 主分类号 H01L31/04
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