SEMICONDUCTOR COMPONENT COMPRISING DEFECT-RICH LAYER FOR OPTIMALLY CONTACTING EMITTERS, AND METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to a semiconductor component made of a semiconductor material, which component has a defect-rich semiconductor layer with a defect concentration of at least 103 defects per cm2 disposed on a surface of the semiconductor component. The invention likewise relates to a method for producing said semiconductor component, a semiconductor layer being applied to the semiconductor material by means of physical or chemical vapor deposition and sintered in a further operating step, e.g., during or following vapor deposition. The desired defect concentration in the applied semiconductor layer is then set.