HIGH-VOLTAGE VERTICAL TRANSISTOR WITH MULTI-GRADIENT DRAIN DOPING PROFILE

摘要

PROBLEM TO BE SOLVED: To provide a high-voltage transistor structure that optimizes both on-state and off-state breakdown voltages of the device simultaneously.

SOLUTION: A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections. Each section of the plurality of sections has a substantially constant doping concentration gradient. The gradient of one section is at least 10% greater than the gradient of another section.

COPYRIGHT: (C)2012,JPO&INPIT