MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAME

摘要

In a first aspect, a method of forming a memory cell having a diamond like carbon (DLC) resistivity- switching material is provided that includes (1) forming a metal-insulator-metal (MIM) stack that includes (a) a first conductive layer; (b) a DLC switching layer above the first conductive layer; and (c) a second conductive layer above the DLC switching layer; (2) forming a compressive dielectric liner along a sidewall of the MIM stack; and (3) forming a steering element coupled to the MIM stack. Numerous other aspects are provided.