发明名称 |
GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS |
摘要 |
<p>A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming first and second nanowire channels connected at each end to semiconductor pads at first and second wafer regions, respectively, with second nanowire channel sidewalls being misaligned relative to a crystallographic plane of the semiconductor more than first nanowire channel sidewalls and displacing the semiconductor toward an alignment condition between the sidewalls and the crystallographic plane such that thickness differences between the first and second nanowire channels reflect the greater misalignment of the second nanowire channel sidewalls.</p> |
申请公布号 |
WO2011141229(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
WO2011EP55048 |
申请日期 |
2011.03.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;SLEIGHT, JEFFREY;BANGSARUNTIP, SARUNYA;COHEN, GUY |
发明人 |
SLEIGHT, JEFFREY;BANGSARUNTIP, SARUNYA;COHEN, GUY |
分类号 |
H01L21/335;B82Y10/00;B82Y30/00;B82Y40/00;H01L21/306;H01L21/336;H01L29/04;H01L29/06;H01L29/775;H01L29/78 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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