| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve uniform crystallization when a silicon thin film is crystallized by the irradiation of a pulse laser. <P>SOLUTION: A manufacturing apparatus comprises a laser oscillator for emitting a pulse laser, an optical system for directing the pulse laser to an amorphous semiconductor, and a transfer device for relatively transferring the amorphous semiconductor so as to scan and irradiate the amorphous semiconductor with the pulse laser. In the laser oscillator, the emitted pulse laser has a plurality of peak groups per pulse in temporal intensity variation, and the relationship between a first peak group having a maximum height and a subsequent second peak group of the peak groups meets (the second peak group)/(the first peak group)≥0.35 in a peak intensity value. A crystalline semiconductor having a uniform property is obtained by irradiating the amorphous semiconductor with the pulse laser. <P>COPYRIGHT: (C)2012,JPO&INPIT |
