| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor memory having improved flatness of a top surface of a contact plug located under a memory element. <P>SOLUTION: The semiconductor memory comprises: a semiconductor substrate; a plurality of switching transistors provided on the semiconductor substrate; a contact plug that is buried between two adjacent switching transistors, is isolated from each gate of the two adjacent switching transistors and electrically connected to sources or drains of the two adjacent switching transistors, and whose top surface is located at a higher position than the top surfaces of the switching transistors; a memory element storing data, which is formed on a top surface of the contact plug; and wiring provided on the memory element. <P>COPYRIGHT: (C)2012,JPO&INPIT |
