| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device whose write/erase characteristics of each memory cell can be made as uniform as possible. <P>SOLUTION: A plurality of memory cell transistors MT have active regions Sa thereof separated from each other by an element separating groove 2. These memory cell transistors MT respectively include a charge trap film 4 on the top face of or above the active region Sa via a tunnel insulation film 3, with the charge trap film 4 having a charge accumulating function. A laminated insulation film B includes at least the tunnel insulation film 3 and the charge trap film 4 as its composition, with the tunnel insulation film 3 formed along the inner face of the element separating groove 2 and the charge trap film 4 laminated along the top face of the tunnel insulation film 3, and is embedded in the entire internal region of the element separating groove 2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
