STRUCTURE AND METHOD FOR AIR GAP INTEGRATION

摘要

PROBLEM TO BE SOLVED: To provide a structure integrating an air gap and a method for forming the same.

SOLUTION: Methods for producing air-gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing metal-insulator interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in the photo-patternable low k material in which air gaps of different depths are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

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