发明名称 |
METHODS AND APPARATUS FOR FORMING NITROGEN-CONTAINING LAYERS |
摘要 |
Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH3) and an inert gas while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. |
申请公布号 |
US2011281442(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US201113192139 |
申请日期 |
2011.07.27 |
申请人 |
BEVAN MALCOLM J.;SWENBERG JOHANES;NGUYEN SON T.;LIU WEI;MARIN JOSE ANTONIO;LI JIAN |
发明人 |
BEVAN MALCOLM J.;SWENBERG JOHANES;NGUYEN SON T.;LIU WEI;MARIN JOSE ANTONIO;LI JIAN |
分类号 |
H01L21/318;H01L21/316 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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