发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A manufacturing method is disclosed which ensures strength of a wafer and improves device performance. A thermal diffusion layer is formed from a front surface of a wafer. A tapered groove which reaches the thermal diffusion layer is formed from a back surface by anisotropic etching with alkaline solution. In-groove thermal diffusion layer is formed on side wall surfaces of the groove. A separation layer of a reverse blocking IGBT is configured of the thermal diffusion layer and the in-groove diffusion layer. The thermal diffusion layer is formed shallowly by forming the in-groove diffusion layer. It is possible to considerably reduce thermal diffusion time. By carrying out an ion implantation forming the in-groove diffusion layer and an ion implantation forming a collector layer separately, it is possible to select an optimum value for tradeoff between turn-on voltage and switching loss, while ensuring reverse blocking voltage of the reverse blocking IGBT. |
申请公布号 |
US2011281406(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US201113109660 |
申请日期 |
2011.05.17 |
申请人 |
OGINO MASAAKI;WAKIMOTO HIROKI;MIYAZAKI MASAYUKI;FUJI ELECTRIC CO., LTD. |
发明人 |
OGINO MASAAKI;WAKIMOTO HIROKI;MIYAZAKI MASAYUKI |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|