| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device which has a new structure and is improved in light emission efficiency, a manufacturing method of the light emitting device, a light emitting device package, and a lighting system. <P>SOLUTION: The light emitting device includes a multi-thin-film mirror which is formed on a transparent electrode layer by repeatedly laminating, at least once, a first thin film layer having a first refractive index and a second thin film layer having a second refractive index that is different from the first refractive index. A thickness (d) of a second conductivity type semiconductor layer is derived from an equation 2*Φ1+Φ2=N*2π±Δ (0≥Δ≥π/2), where Φ1 is a phase shift that is generated when light from the vertical direction passes through the second conductivity type semiconductor layer and Φ1=2πnd/λ (where n is a refractive index of the light, λ is a wavelength of the light, and d is a thickness of the second conductivity type semiconductor layer), Φ2 is a phase shift that is generated when the light is reflected by either the transparent electrode layer or the multi-thin-film mirror, and N is a natural number. <P>COPYRIGHT: (C)2012,JPO&INPIT |
