发明名称 |
EMITTER OF FIELD IONIZATION TYPE ION SOURCE, FOCUSED ION BEAM DEVICE AND FOCUSED ION BEAM IRRADIATION METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a focused ion beam device which exhibits high throughput of sample processing by increasing the amount of ion beam used for irradiating a sample. <P>SOLUTION: In the emitter of a field ionization type ion source which emits an ion beam 7 by field ionizing gas supplied to the emitter 1 with an electric field formed at the tip thereof, the tip of the emitter 1 consists of a protrusion 1c of atomic level, a spherical part having a protrusion, and a columnar portion continuous to the spherical part and having a slope angle. The spherical part has a radius of curvature of 110 nm or more and a slope angle of 15° or less in the focused ion beam device including the emitter of the field ionization type ion source. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011233509(A) |
申请公布日期 |
2011.11.17 |
申请号 |
JP20110044290 |
申请日期 |
2011.03.01 |
申请人 |
SII NANOTECHNOLOGY INC;MIE UNIV |
发明人 |
SUGIYAMA YASUHIKO;OGAWA TAKASHI;NISHINAKA KENICHI;HATA KOICHI |
分类号 |
H01J27/26;H01J37/08;H01J37/317 |
主分类号 |
H01J27/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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