发明名称 |
SEMICONDUCTOR PRESSURE SENSOR |
摘要 |
A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided. Included are: a first semiconductor substrate on which is formed a recess portion that has an opening on a first surface in a thickness direction; a second semiconductor substrate that is disposed so as to face the first surface of the first semiconductor substrate; and a first silicon oxide film that is interposed between the first semiconductor substrate and the second semiconductor substrate, and on which is formed a penetrating aperture that communicates between the recess portion and the second semiconductor substrate, and at least a portion of an edge portion of the penetrating aperture is positioned inside an opening edge portion of the recess portion when viewed from a side facing the penetrating aperture and the opening of the recess portion. |
申请公布号 |
US2011278685(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US20100949459 |
申请日期 |
2010.11.18 |
申请人 |
YOSHIKAWA EIJI;IZUO SHINICHI;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
YOSHIKAWA EIJI;IZUO SHINICHI |
分类号 |
H01L29/84 |
主分类号 |
H01L29/84 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|