| 摘要 |
Disclosed is a high-voltage diode structure which realizes high reverse recovery capability and high maximum allowable forward current. The distance between a longitudinal end of a p well layer in an anode region and an element isolation region formed to surround the diode is 5 μm or shorter so as to allow a depletion layer to reach the element isolation region when a maximum rated reverse voltage is applied. During reverse recovery, the electric field strength at an end portion of a p well layer is reduced, hole current is reduced, and local temperature rises are reduced. |
