发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide. |
申请公布号 |
US2011278594(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US201113104247 |
申请日期 |
2011.05.10 |
申请人 |
NISHIGUCHI TARO;SASAKI MAKOTO;HARADA SHIN;OKITA KYOKO;INOUE HIROKI;NAMIKAWA YASUO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NISHIGUCHI TARO;SASAKI MAKOTO;HARADA SHIN;OKITA KYOKO;INOUE HIROKI;NAMIKAWA YASUO |
分类号 |
H01L29/12;B32B13/04;C30B23/02;H01L21/20 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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