发明名称 METHOD FOR MANUFACTURING FLUX GATE SENSOR
摘要 <p>Disclosed is a method for manufacturing a flux gate sensor, which comprises at least: a first step wherein a first wiring layer is formed on a substrate; a second step wherein a first insulating layer that is composed of a first resin is formed so as to cover the first wiring layer; a third step wherein a magnetic layer that is formed on the first insulating layer and constitutes the core of a flux gate is formed; a fourth step wherein a second insulating layer that is composed of a second resin is formed on the first insulating layer so as to cover the magnetic layer; and a fifth step wherein a second wiring layer is formed on the second insulating layer. The method for manufacturing a flux gate sensor is characterized in that: the first wiring layer and the second wiring layer are electrically connected so as to respectively constitute a magnetic coil and a pickup coil; and the respective process temperatures at least in the third, fourth and fifth steps are lower than the glass transition temperature of the first resin.</p>
申请公布号 WO2011142416(A1) 申请公布日期 2011.11.17
申请号 WO2011JP60939 申请日期 2011.05.12
申请人 FUJIKURA LTD.;OHMORI KENICHI 发明人 OHMORI KENICHI
分类号 G01R33/04 主分类号 G01R33/04
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