| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide stable electrical characteristics to a semiconductor device using an oxide semiconductor and to make the semiconductor device highly reliable. <P>SOLUTION: To provide a transistor including an oxide semiconductor film in which metal oxide films made of the same component as an oxide semiconductor film which serves as a channel protective film are laminated on an upper surface of the oxide semiconductor film. The oxide semiconductor film used as an active layer of the transistor is made of an oxide semiconductor from which impurities such as hydrogen, moisture, hydroxyl group, and hydride are removed by heat treatment and is highly purified and electrically made to be i-type (made to be intrinsic) by providing oxygen which is a main component of the oxide semiconductor but is reduced in a process of removing the impurities. <P>COPYRIGHT: (C)2012,JPO&INPIT |
