发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CREATING PROGRAMMING CURRENT PULSE
摘要 <P>PROBLEM TO BE SOLVED: To shorten a programming period and to progressively reduce a programming current pulse by adjusting a supplying period and a size of this programming current pulse. <P>SOLUTION: The device includes: a section control signal generating part for creating a section control signal which is activated after a first setting period in response to a programming enable signal; a first control code generating part which creates a first writing control code to be updated periodically during a second setting period in response to the programming enable signal and activates the update of the first writing control code in response to the section control signal; a second writing control code generating part for creating a second writing control code to be activated during a predetermined period in response to the programming enable signal; and a data writing part for outputting a first programming current pulse having a size corresponding to a code combination of the first writing control code or a second programming current pulse having a size corresponding to the second writing control code. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011233220(A) 申请公布日期 2011.11.17
申请号 JP20110045360 申请日期 2011.03.02
申请人 HYNIX SEMICONDUCTOR INC 发明人 AHN YEON BOK
分类号 G11C13/00;H01L27/105 主分类号 G11C13/00
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