| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has nanowires vertically formed as components, suppresses an increase of parasitic capacity, and improves a operating speed time constant. <P>SOLUTION: An interlayer dielectric film between a main plane of a conductive substrate 101 and electrode 109 is divided into two layers, a film thickness adjustment layer 102 and a protective insulating layer 103, thereby a low dielectric constant film 102 with poor adhesiveness to film and the electrode 109 are separated each other by the protective insulating layer 103 to suppress peeling, and to reduce a parasitic capacity of a nanowire 107 electrically connecting the main plane to the electrode 109, and a parasitic capacity between the conductive substrate 101 and the electrode 109. <P>COPYRIGHT: (C)2012,JPO&INPIT |
