| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device for producing a polycrystalline Si ingot, with which it is possible to control the growth direction, arrangement, configuration, and distribution of dendrite crystals that are to be generated in the beginning of growth, and with which a high-quality highly homogeneous polycrystalline Si ingot can be produced, and to provide a polycrystalline Si ingot and a polycrystalline Si wafer. <P>SOLUTION: In the vicinity of the bottom or surface of a Si melt 2 placed in a crucible 1, a local area 2a in which the melt has a low temperature and a high degree of supercooling and which has the shape of a line, point, circle, circular circumstance, or circular arc or of a combination of two or more thereof can be formed so that a plurality of dendrite crystals 3 can be generated from an area having a high melt temperature toward the local area 2a, which has a low melt temperature, or a plurality of dendrite crystals 3 can be generated from the local area 2a, which has a low melt temperature, toward an area having a high melt temperature, by changing the degree of supercooling of the local area 2a, which is present in the vicinity of the bottom or surface of the Si melt 2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
