| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which permits high aspect ratio processing to be applied to a target material in a film composition having a fewer laminated layers than in a SMAP method. <P>SOLUTION: According to a semiconductor device manufacturing method in a form of embodiment, a first film containing B and a second film consisting of silicon oxide film are formed on a target material, and an original plate which has a concave-convex shaped pattern formed therein is pressed against the second film to transfer the pattern thereto. The first film, with the second film which now has the pattern transferred thereto serving as a mask, is etched by using an etching gas containing CH<SB POS="POST">3</SB>F and O<SB POS="POST">2</SB>and having an oxygen concentration of 50-90 atom% to transfer the pattern thereto. The target material, with the first film which now has the pattern transferred thereto serving as a mask, is processed to form recessed portions having the pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT |
