| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which features a low energy barrier between its reverse-side electrode and semiconductor substrate so that the on-resistance of the semiconductor device is reduced, and also whose exposed face of the reverse-side electrode has good corrosion resistance and whose reverse-side electrode and semiconductor substrate are firmly adhered to each other, making it possible to reduce the cost of reverse-side electrode material. <P>SOLUTION: A reverse-side electrode 300 has a laminated structure of a Ti silicide layer 301, a Ti layer 302, a Ni layer 303, a Ag layer 304, and a Au layer 305 which are laminated in order from a Si substrate 101 side, or a laminated structure of a Ti silicide layer 301, a Ni layer 303, a Ag layer 304, and a Au layer 305 which are laminated in order from a Si substrate 101 side. The reverse-side electrode 300 may preferably be manufactured by forming the Ti layer 302, the Ni layer 303, and the Ag layer 304 successively on the Si substrate 101 and then, after creating the Ti silicide layer 301 by a sintering treatment, forming the Au layer 305. <P>COPYRIGHT: (C)2012,JPO&INPIT |
