| 摘要 |
<P>PROBLEM TO BE SOLVED: To miniaturize a memory cell of a non-volatile memory device. <P>SOLUTION: A floating gate electrode 120 is formed on a tunnel insulating film 110. A control gate electrode 140 is formed on the floating gate electrode 120 through a first insulating film 130. A select gate insulating film 150 is formed on a substrate 10, and located at a side of the tunnel insulating film 110. A select gate electrode 170 is located on the select gate insulating film 150, and also located at a side of the floating gate electrode 120 through a second insulating film 160. An lower edge 174 of a side surface of the select gate electrode 170 which faces the floating gate electrode 120 intrudes into the lower side of the second insulating film 160. <P>COPYRIGHT: (C)2012,JPO&INPIT |
