发明名称 SOLID, MULTI-STATE MOLECULAR RANDOM ACCESS MEMORY (RAM)
摘要 A solid-state, multi-valued, molecular random access memory (RAM) device, comprising an electrically, optically and/or magnetically addressable unit, a memory reader, and a memory writer. The addressable unit comprises a conductive substrate; one or more layers of electrochromic, magnetic, redox-active, and/or photochromic materials deposited on the conductive substrate; and a conductive top layer deposited on top the one or more layers. The memory writer applies a plurality of predetermined values of potential biases or optical signals or magnetic fields to the unit, wherein each predetermined value applied results in a uniquely distinguishable optical, magnetic and/or electrical state of the unit, thus corresponding to a unique logical value. The memory reader reads the optical, magnetic and/or electrical state of the unit.
申请公布号 WO2011141913(A1) 申请公布日期 2011.11.17
申请号 WO2011IL00375 申请日期 2011.05.11
申请人 YEDA RESEARCH AND DEVELOPMENT CO. LTD;VAN DER BOOM, MILKO E.;DE RUITER, GRAHAM 发明人 VAN DER BOOM, MILKO E.;DE RUITER, GRAHAM
分类号 G11C13/04;G11C11/56;G11C13/00 主分类号 G11C13/04
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