发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
Example embodiments herein relate to a method of fabricating a semiconductor device. The method may include forming a liner insulating layer on a surface of a gate pattern to have a first thickness. Subsequently, a gap fill layer may be formed on the liner insulating layer by flowable chemical vapor deposition (FCVD) or spin-on-glass (SOG). The liner insulating layer and the gap fill layer may be recessed such that the liner insulating layer has a second thickness, which is smaller than the first thickness, in the region in which a metal silicide will be formed. Metal silicide may be formed on the plurality of gate patterns to have a relatively uniform thickness using the difference in thickness of the liner insulating layer. |
申请公布号 |
US2011281427(A1) |
申请公布日期 |
2011.11.17 |
申请号 |
US201113053668 |
申请日期 |
2011.03.22 |
申请人 |
CHOI YONG-SOON;YI HA-YOUNG;CHOI GIL-HEYUN;HONG EUNKEE;AHN SANG-HOON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI YONG-SOON;YI HA-YOUNG;CHOI GIL-HEYUN;HONG EUNKEE;AHN SANG-HOON |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|