| 发明名称 |
POWER SEMICONDUCTOR SWITCH |
| 摘要 |
A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof. |
| 申请公布号 |
US2011278591(A1) |
申请公布日期 |
2011.11.17 |
| 申请号 |
US20100946787 |
申请日期 |
2010.11.15 |
| 申请人 |
CARTA ROSSANO;BELLEMO LAURA;RICHIERI GIOVANNI;MERLIN LUIGI;SILICONIX TECHNOLOGY C.V. |
发明人 |
CARTA ROSSANO;BELLEMO LAURA;RICHIERI GIOVANNI;MERLIN LUIGI |
| 分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
| 代理机构 |
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