| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved gas supply system used in a reaction chamber used in semiconductor substrate processing. <P>SOLUTION: A gas supply system for processing a semiconductor substrate includes a plurality of gas supplies 16, 18, and 20, a mixing manifold 30 in which gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines 12 and 14 delivering the mixed gas to different zones in the chamber, and a control valve 34. In a method of using the apparatus, a semiconductor substrate is supplied to the reaction chamber and the substrate is processed by supplying of the mixed gas to the first and second zones and adjustment by the control valve so that a rate of flow of the mixed gas in the first or the second gas supply line provides a desired ratio of flow rates of the mixed gas in the first and the second zones. <P>COPYRIGHT: (C)2012,JPO&INPIT |
