发明名称 METHOD FOR MANUFACTURING MICROELECTRONIC DEVICE, AND MICROELECTRONIC DEVICE MANUFACTURED BY THE METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a microelectronic device which has a top surface wide enough to make excellent electric connection between a first electric element and a second electric element distributed to a first layer and a second layer stacked one over the other on a substrate, and also has an interconnection having a cross section small enough not to cause damage due to thermal expansion. <P>SOLUTION: The method comprises: a step (102) of manufacturing at least one arm and at least one second arm which have mutually different lengths so that each of the arms connects a conductive pad having a top surface much larger than the cross-sectional area of the arm and a fixing area defined on the substrate mechanically and directly; and a step (106) of forming the conductive pad in a region of the first layer, and displacing the conductive pad to a connection position where the top surface of the conductive pad is present in a plane, parallel with the substrate, at a lower end of or inside a region of the second layer prior to electric connection with the second electric element. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011233896(A) 申请公布日期 2011.11.17
申请号 JP20110096989 申请日期 2011.04.25
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 THIERRY HIRTH;HERVE BOUTRY;REMI FRANIATTE;STEPHEN MOREAU
分类号 H01L25/10;H01L25/11;H01L25/18 主分类号 H01L25/10
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