| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-performance organic thin film transistor with less variation and a simple method of manufacturing it. <P>SOLUTION: (1) The organic thin film transistor has an organic semiconductor layer formed by an inkjet method configuring a source electrode, a drain electrode and a channel part between the source electrode and the drain electrode on a substrate. The channel part does not include the midpoint of a line segment giving the maximum width R of the contour of the organic semiconductor layer in the planar view, and a channel length L satisfies "L<R/2" with respect to the maximum width R. (2) In the organic thin film transistor described in (1), crystal grains are oriented from the contour to the midpoint in the organic semiconductor layer, and a crystal grain boundary α formed by the collision of the crystal grains grown from the region of the source electrode and the crystal grains grown from the region of the drain electrode is not present in the channel part. (3) In the method of manufacturing the organic thin film transistor, the organic semiconductor layer is formed by the inkjet method using ink containing an organic semiconductor material. <P>COPYRIGHT: (C)2012,JPO&INPIT |
