发明名称 ORGANIC TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a transistor in which influences of polar molecules existing in a substrate, an insulating film and the like of a transistor to a channel is reduced. <P>SOLUTION: An organic transistor comprises: an insulating substrate; a gate electrode provided over the substrate; a gate insulating layer formed over the substrate and the gate electrode; a source electrode and a drain electrode provided over the gate insulating layer; a nonpolar high molecular underlying insulating layer provided over the gate insulating layer at least in a region between the source electrode and the drain electrode over the substrate; and an organic semiconductor layer provided over at least a part of the source electrode and the drain electrode and over the underlying insulating layer between the source electrode and the drain electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011233587(A) 申请公布日期 2011.11.17
申请号 JP20100100172 申请日期 2010.04.23
申请人 SEIKO EPSON CORP 发明人 NAKAMURA KIYOSHI
分类号 H01L21/336;H01L29/786;H01L51/05 主分类号 H01L21/336
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