发明名称 Data Writing Method and Data Storage Device
摘要 The invention provides a data writing method for a flash memory. First, a target block for storing write data is selected from a plurality of blocks of the flash memory. A target pair page is then selected from a plurality of pair pages of the target block according to a pair page record table, wherein the pair page comprises a strong page and a weak page. The flash memory is then directed to write a data page of the write data to the strong page of the target pair page. The flash memory is then also directed to write first predetermined data to the weak page of the target pair page, wherein the weak page storing the first predetermined data extends the data duration of the strong page of the target pair page. Selecting of the target pair page, writing of the data page, and writing of the first predetermined data are repeated until all of the write data are written to the target block.
申请公布号 US2011280074(A1) 申请公布日期 2011.11.17
申请号 US201113084147 申请日期 2011.04.11
申请人 LIN CHENG-WEI;SILICON MOTION, INC. 发明人 LIN CHENG-WEI
分类号 G11C16/10 主分类号 G11C16/10
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