An edge-emitting semiconductor laser (1001) is specified, having: - a semiconductor body (1) which comprises an active zone (5) suitable for producing electromagnetic radiation; - at least two facets (7) on the active zone (5), which form a resonator (55); - at least two contact points (2) which are spaced apart from one another in a lateral direction (100) by at least one intermediate region (22) and which are mounted on an outer face (11) of the semiconductor body (1).
申请公布号
WO2011141421(A2)
申请公布日期
2011.11.17
申请号
WO2011EP57415
申请日期
2011.05.09
申请人
OSRAM OPTO SEMICONDUCTORS GMBH;KOENIG, HARALD;STRAUSS, UWE;REILL, WOLFGANG