FLEXIBLE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SAME, AND IMAGE DISPLAY DEVICE

摘要

Disclosed is a manufacturing method for a flexible semiconductor device. The manufacturing method comprises: a step (A) in which a metal foil is prepared; a step (B) in which a gate insulating layer including a section which is to become a gate insulating film is formed on the metal foil; a step (C) in which a support substrate is formed on the insulating layer; a step (D) in which a part of the metal foil is etched, forming a source electrode and a drain electrode from the metal foil; a step (E) in which a semiconductor layer is formed in the gap disposed between the source electrode and the drain electrode using the source electrode and the drain electrode as bank members; and a step (F) in which a resin film layer is formed on the insulating layer so as to cover the semiconductor layer, the source electrode, and the drain electrode. In step (F), part of the resin film layer is fitted in the gap disposed between the source electrode and the drain electrode.