发明名称 A HIGH VOLTAGE DC SWITCHYARD WITH SEMICONDUCTOR SWITCHES
摘要 <p>A high voltage DC switchyard (40) comprises at least one busbar (41, 42), at least two DC lines (43-46) connected to said at least one busbar through DC breakers (50-55) comprising a section of at least one semiconductor device (48) of turn-off type and rectifying member (49) in anti-parallel therewith. At least one said DC line is connected to at least one said busbar through a unidirectional said DC breaker (50, 52, 53, 55), i.e. a DC breaker that may only block current therethrough in one direction.</p>
申请公布号 WO2011141053(A1) 申请公布日期 2011.11.17
申请号 WO2010EP56464 申请日期 2010.05.11
申请人 ABB TECHNOLOGY AG;ASPLUND, GUNNAR;HAEFNER, JURGEN 发明人 ASPLUND, GUNNAR;HAEFNER, JURGEN
分类号 H02J3/36;H02B1/20 主分类号 H02J3/36
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