发明名称 DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a dielectric layer and/or a dielectric composition that could be processed at lower temperatures and/or shorter time periods. <P>SOLUTION: A process for fabricating an electronic device comprises: depositing a dielectric composition, which comprises a dielectric material, a crosslinking agent, and an infrared absorbing agent, on a substrate; exposing the dielectric composition to infrared radiation to cure the dielectric composition to form a dielectric layer on the substrate; and forming a semiconductor layer on the substrate. Further, the electronic device comprises a dielectric material layer comprising a dielectric material and an infrared absorbing agent that are crosslinked. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011233884(A) 申请公布日期 2011.11.17
申请号 JP20110090611 申请日期 2011.04.15
申请人 XEROX CORP 发明人 WU YILIANG;LIU PIN;ANTHONY WIGGLESWORTH;NANXIN FU
分类号 H01L29/786;H01L21/312;H01L21/336;H01L51/05;H01L51/30 主分类号 H01L29/786
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