| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of suppressing an occurrence of electric crosstalk between a semiconductor light-emitting element and a semiconductor light-detecting element. <P>SOLUTION: An insulating layer 20 and a metal layer 30 are interposed between a semiconductor laser element 40 and a semiconductor light-detecting element 10. The insulating layer 20 is formed by oxidizing a high-concentration Al contained in an AlAs layer that is formed on a p-type contact layer 13 of the semiconductor light-detecting element 10. The insulating layer 20 is bonded to the semiconductor laser element 40 through the metal layer 30. <P>COPYRIGHT: (C)2012,JPO&INPIT |
